电化学原子层外延及 Te、Cd 元素欠电势沉积研究  

Investigations on the ECALE and on the Underpotential Deposition of Te and Cd Elements

作　　者：樊玉薇[1] 李永祥[1] 吴冲若[1] 

机构地区：[1]东南大学电子工程系

出　　处：《东南大学学报（自然科学版）》1998年第1期37-42,共6页Journal of Southeast University：Natural Science Edition

基　　金：国家自然科学基金

摘　　要：阐述了一种外延沉积化合物半导体的新方法———电化学原子层外延（ＥＣＡＬＥ），并对其基础欠电势沉积（ＵＰＤ）进行了讨论．着重研究了Ⅱ、Ⅳ族元素Ｃｄ、Ｔｅ的电化学欠电势沉积，根据电化学循环伏安曲线，研究了Ｔｅ与Ｃｄ在ＳｉＡｕ（１１１）基片上以及交替生长过程中ＵＰＤ沉积电位及相应覆盖度值．由此确定了在ＳｉＡｕ（１１１）衬底上交替沉积Ｔｅ、Ｃｄ原子层的方法．在此基础上，初步进行了多次交替沉积，并用ＡＦＭ与ＡＥＳ研究了所得样品表面形貌与成分．A low cost new method for epitaxial deposition of semiconducting compounds is illustrated, that is referred to as “Electrochemical Atomic Layer Epitaxy(ECALE)”. The underpotential deposition (UPD) technique, which is a key of ECALE, is introduced. The emphyses are put on the researches of the UPD of Ⅱ and Ⅳ groups elements Cd and Te by using cyclic voltammetry. The potential sweep diagrams are analysed and the potentials corresponding to the UPD deposition and stripping of Cd and Te on Si Au(111) substrate and on the Te atomic layer covered Si Au(111) substrate and Cd atomic layer covered Si Au(111) substrate are determined respectively. The coverages are calculated. The method for the alternate deposition of Te and Cd atomic layers on Si Au(111) substrate is proposed, based on which, fifty times alternate depositions has been tried, and the surface images of the samples have been viewed by AFM, as well as the integrants of the samples have been analysed by AES.

关 键 词：ECALE CDTE 欠电势沉积 薄膜 

分 类 号：O484.1[理学—固体物理] TN304.204[理学—物理]