摆式抛光机的运动摩擦学分析  

Analysis on kinematical tribology of pendulum polishing machine

作　　者：王武刚[1] 吕玉山[1] 

机构地区：[1]沈阳理工大学机械工程学院,沈阳110168

出　　处：《现代制造工程》2009年第1期77-80,共4页Modern Manufacturing Engineering

基　　金：沈阳市自然科学基金资助项目(1033064-1-03)

摘　　要：为了得到抛光机运动参量对被抛光硅片平面度的影响规律,利用坐标变换理论建立摆式抛光运动方程,基于运动方程和抛光材料去除的Preston模型,利用蒙特卡罗法分别对磨料轨迹、硅片表面的抛光相对摩擦长度等进行模拟,得到摆幅、摆臂初始角和抛光盘转速等对硅片表面切削轨迹和摩擦长度分布的影响规律,根据模拟结果可以得到最佳化的参数区域,使硅片表面的材料去除率分布均匀性和轨迹得到改善。In order to obtain the effects of polishing parameters on the surface profile of silicon wafer, the kinematical equation on a pendulum polisher is established according to the transformation of coordinate system. Base on kinematical equation and Preston equation on material removal rate, using the method of Monte Carlo, the trajectory of the abrasive grit cutting and the friction distance on the silicon wafer are numerically simulated, and the effects of the rotational speed of the polishing disk, the amplitude and initializing angle of swing arm on the trajectory and the friction distance have been discussed, the simulative results show that there are optimal polishing parameters, which can make the distribution of material removal rate more uniformity and the trajectory better on wafer surface.

关 键 词：化学机械抛光 抛光运动 摩擦长度 材料去除率 

分 类 号：TQ320[化学工程—合成树脂塑料工业]