微氮CZ硅单晶中氧沉积的研究  

THE STUDY OF THE BEHAVIOR OF OXYGEN PRECIPITATION IN THE NITROGENDOPED CZOCHRALSKI SILICON CRYSTALS

作　　者：潘飞蹊 游志朴 

出　　处：《四川大学学报（自然科学版）》1998年第1期28-31,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：硅材料科学国家重点实验室资助

摘　　要：通过对微氮ＣＺ硅单晶中氧沉积性质的研究表明，在氮—氮对（Ｎ—Ｎ）浓度为９×１０１５／ｃｍ３且经去热施主预热处理的样品中，氮对氧的沉积没有增强作用．因此，在实用的微氮ＣＺ硅单晶中的氮杂质不会对三步本征吸杂产生不利影响．The behavior of oxygen precipitation in the nitrogendoped czochralski silicon crystals has been studied.It was found that,in the samples of which nitrogennitrogen pairs’ concentration is less than 9×1015/cm3 and which have been preannealed for thermal donors eliminating,the presentation of nitrogen impurity would not enhance oxygen precipitation.Therefore,the technology of intrinsic gettering would not be influenced by nitrogen impurities.

关 键 词：氮 杂质 氧沉积 本征吸杂 硅 单晶 

分 类 号：TN304.12[电子电信—物理电子学]