HgCdTe晶体的缺陷吸除效应  

The Effect of Defect Gettering in HgCdTe Crystal

作　　者：王珏 刘激呜 俞振中 汤定元 

机构地区：[1]中科院上海技物所

出　　处：《激光与红外》1990年第3期33-37,共5页Laser & Infrared

基　　金：国家自然科学基金

摘　　要：利用二次离子质谱测量HgCdTe晶体杂质时发现:杂质在晶片表面附近有富集现象,实验证明该现象属缺陷吸除效应,分析了杂质富集的机理,并利用缺陷吸除工艺成功地减少了HgCdTe晶体内剩余杂质,低温电学参数、光学透过率测量结果表明:该工艺能提高HeCdTe材料的光、电性能。The residual impurities in HgCdTe crystal are investigated using secondaryion spectrometry(SIMS). It is found that the impurities are richer in near surfa- ce layer than bulk material. This phenomenon is proved to be related to the effect of defect gettering in HgCdTe crystal. The mechanism of defect gettering is analysed. The technique of defect gettering has been successfully used to reduce residual impurities in HgCdTe crystal. The results of electrical and optical property measurements in low temperature indicate that the technique can also improve material properties efficiently.

关 键 词：HGCDTE晶体 缺陷 吸除效应 

分 类 号：TN304.26[电子电信—物理电子学]