一种工作在亚阈区超低功耗带隙基准源的设计  

A design of ultra-low-power bandgap reference base on the subthreshold region

作　　者：杨盛波[1] 唐宁[1] 覃贤芳[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《电子技术应用》2009年第2期71-73,77,共4页Application of Electronic Technique

摘　　要：基于RFID标签芯片的低功耗要求,设计了一种超低功耗的带隙基准电压源,电路中的主要MOS管都工作在亚阈值状态。在spectre环境下仿真表明,当电源电压为3 V～7 V,温度在-30℃～+120℃变化时,输出基准电压为1.8 V±0.001 V。电源电压抑制比(PSRR)为69.5 dB,并且电路工作电流维持在1.5μA～7μA的范围内。Based on the RFID tags chip＇s low power requirements, this paper designs an ultra-low-power bandgap reference, almost all the MOS of this circuit are working in sub threshold state. Simulation results under the spectre show that, a reference voltage of 1.SV±0.001V is obtained, in the range of power supply from 3V to 7V, and the temperature from -30℃ to ＋120℃. The power supply rejection ratio is 69.5 dB, and the working current of this circuit maintain 1.5 μA to 7 μA.

关 键 词：亚阂值 带隙基准源 电源抑制比 低功耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]