紫外辐照对碲镉汞MIS结构复合特性的影响  

THE EFFECT OF ULTRAVIOLET IRRADIATION ON THE HgCdTe MIS STRUCTURE

作　　者：赵军[1] 陆慧庆[1] 龚海梅[1] 方家熊[1] 李言谨[1] 

机构地区：[1]中国科学院传感技术国家重点实验室,上海技术物理研究所

出　　处：《红外与激光工程》1998年第1期48-51,共4页Infrared and Laser Engineering

摘　　要：用光电导衰退法和ＭＩＳ器件的电容－电压特性测量研究了紫外辐照对碲镉汞样品的影响。研究表明：紫外辐照使ＭＩＳ器件的氧化膜／碲镉汞界面固定电荷减少，表面由强积累向平带变化；紫外辐照使碲镉汞样品的电阻明显增大，样品的表面复合速度上升，少子体寿命下降。说明紫外辐射不仅对碲镉汞样品的表面有影响，而且对碲镉汞体内也有影响。这些效应可以用碲镉汞表面能带结构的模型来解释。In this paper, the effect of the ultraviolet irradiation on the HgCdTe photoconductors is studied using the photoconductive decay method and the M IS capacitance - voltage measurement . It is shown that. the ultraviolet irradiation reduced the interface charge density of the anodic oxide - HgCdTe interfaces, thus the energy band is changed from strong accumulation to the near flat - band condition . After the ultraviolet irradiation, it is observed that the surface recombination velocity and the sample resistance are increased, the bulk minority lifetime is decreased . These effects can be ex- plained by the HgCdTe surface energy band model .

关 键 词：碲镉汞 光电导器件 紫外辐照 MIS器件 

分 类 号：TN214.03[电子电信—物理电子学] TN23