Si薄膜低温液相外延  

Silicon film preparation by liquid phase epitaxy at low temperature

作　　者：钱永彪[1] 史伟民[1] 陈培峰[1] 闵嘉华[1] 顾永明 郭燕明 桑文斌[1] 

机构地区：[1]上海大学,上海201800

出　　处：《半导体光电》1998年第2期128-132,共5页Semiconductor Optoelectronics

摘　　要：选用Au／Bi合金熔体在低温下实现了硅薄膜的外延生长，外延温度400℃～500℃，采用Sn源内的饱和硅来保护衬底的方法，以防止升温饱和过程中衬底的氧化。运用扫描电镜、C－V法及俄歇能谱对外延膜形貌和结深附近载流子浓度进行了观察和测量。Low temperature liquid phase epitaxy of silicon thin films with Au/Bi melt as source materials is succcssfully carried out at 400℃～500℃. Si-saturated Sn solution is used to protect the substrate surface, so as to prevent it from being oxidized. The morphologies of Si epitaxy thin films and carrier concentration hear its junction are observe and measured by means of SEM, X - ray, AES and C -V measurements.

关 键 词：半导体薄膜材料 低温液相外延 硅薄膜 太阳能电池 

分 类 号：TN304.12[电子电信—物理电子学] TM914.42[电气工程—电力电子与电力传动]