外加电场对金属诱导非晶硅横向结晶的影响  

Effect of External Electric Field on Lateral Crystallization of a-Si Induced by Some Metals

作　　者：王光伟[1] 

机构地区：[1]天津工程师范大学电子工程系,天津300222

出　　处：《半导体技术》2009年第2期107-112,共6页Semiconductor Technology

基　　金：天津市高校科技发展基金项目(20060605)

摘　　要：综述了Al和Ni在外加直流电场以及Cu在交流电场作用下诱导非晶硅(a-Si)薄膜横向结晶的特点和机理。研究了外加电场对金属诱导a-Si薄膜横向结晶的诸多影响因素,如场强及分布等。结果表明,相对于无电场时,适当强度的电场可显著加快金属诱导横向结晶的速率,场强超过某一临界值则降低该速率,并基于电迁移效应作了较好的解释。对Cu诱导a-Si薄膜横向结晶,在同样条件下,直交流混合电场比单纯的直流电场能引发更高的结晶速率。The feature and mechanism of a-Si films induced by metal （Al, Ni and Cu ） lateral crystallization at static and alternating field was summarized. Some factors, such as electric field strength and distribution on crystallization of a-Si were studied. The results show that there exists a critical electric field, below which, the rate of metal-induced crystallization increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well in terms of electromigration effect. For a-Si film, under the same circumstances, a direct-alternating mixed electric field will trigger a higher lateral crystallization velocity than a direct electric field only.

关 键 词：金属诱导横向结晶 电场增强金属诱导横向结晶 扩散 固相反应 晶粒生长 交流电场 

分 类 号：TN304.055[电子电信—物理电子学] TN304.8