含C_(60)聚合物薄膜的制备及其光电特性  

Preparation and Photoelectric Characteristics of the Polymeric Thin Film Containing C 60

作　　者：管玉国 戴国瑞[2] 孙颖[2] 南金[2] 

机构地区：[1]黑龙江克山师范专科学校物理系 [2]吉林大学电子工程系

出　　处：《半导体技术》1998年第2期51-53,55,共4页Semiconductor Technology

基　　金：国家自然科学基金;中国科学院长春物理研究所激发态物理开放实验室

摘　　要：采用ＰＥＣＶＤ技术，分别在不同衬底上淀积了含Ｃ６０聚合物薄膜材料。对所淀积的薄膜材料进行了紫外可见光谱、质谱和表面光电压谱的分析，对异质结光伏特性和薄膜表面横向光电压进行了测量，得到了具有应用前景的可喜效果。This paper reports that the polymeric films containing C 60 onto a variety of substrates have been deposited by using plasma enhanced chemical vapor deposition technique.The characteristics of the thin films have been analysed by visible and ultraviolet spectroscope,mass spectrometry and surface photovollaic spectrum.The photovoltage characteristics of the heterojunction and surface crossed photovoltage have been measured.It is shown that applied prospects would be of considerable aveil.

关 键 词：含C60聚合物 薄膜 谱学表征 PECVD 半导体 

分 类 号：TN304.52[电子电信—物理电子学] TN304.055