高能电子束辐照改善电力半导体器件特性研究  

Studies on Characteristics of Power Semiconductor Devices Irradiated by High Energy Electron Beam

作　　者：赵善麒[1] 李天望[2] 裴素华[3] 

机构地区：[1]北京电力电子新技术研究开发中心,100088 [2]复旦大学电子工程系,上海200433 [3]山东师范大学半导体研究所,济南250014

出　　处：《固体电子学研究与进展》1998年第1期64-69,共6页Research & Progress of SSE

摘　　要：用12MeV电子束对普通高压晶闸管、快速晶闸管、双向晶闸管进行辐照，测试这几种器件的主要电学参数。实验发现12MeV电子辐照能明显改善这些电力半导体器件的电学性能。辐照后的器件经过退火处理，可以长期稳定工作。The high voltage thyristors, fast thyristors and triacs were irradiatedwith 12 MeV electron beam. The major electrical parameters were measured beforeand after irradiation. The experimental results show that the characteristics of thesedevices can be effectively improved by using this treatment. After annealing,the irradiated devices can work stably for a long time.

关 键 词：电子束 辐照 功率半导体器件 退火 晶闸管 

分 类 号：TN34[电子电信—物理电子学] TN303