纳米硅薄膜二极管中的共振隧穿现象  

The transport and quantum dots characters of hydrogenated nano crystalline silicon diode

作　　者：何宇亮[1,2,3,4,5] 奚中和[1,2,3,4,5] 余明斌[1,2,3,4,5] 李月霞 彭英才[1,2,3,4,5] 刘明[1,2,3,4,5] 

机构地区：[1]北京航空航天大学理学院材料物理与化学研究中心 [2]中科院北京半导体所超晶格与微结构国家实验室 [3]北京大学电子学系 [4]西安理工大学物理系 [5]河北大学电子科学与信息工程系

出　　处：《半导体杂志》1998年第1期1-9,共9页

基　　金：国家自然科学基金

摘　　要：利用纳米硅薄膜中微晶粒的量子点（Ｑ．Ｄ）特征制成隧道二极管结构，在液氮温区（＜１００Ｋ）在其σＶ、ＩＶ及ＣＶ特性曲线上呈现出共振隧穿峰、库仑台阶和量子振荡现象。说明，对无序分布着的量子点阵列，只要其粒子尺寸足够小，同样会发生量子功能作用。估计了在室温范围呈现出这种量子功能作用的可能性。Fine crystalline grains (3～6nm in size) of nano size crystalline silicon films (nc Si∶H) has been demonstrated structurally and electrically to be characterized by quantum dots (QD). The conductance of nc Si∶H films is shown a distinct small size effect,e.g., conductivity increases with the size of grains decreasing. A tunnel diode sample has been fabricated with thin nc Si:H film (about 20nm ), and the Coulomb staircase clearly appeared on its σ V and I V curves at liquid nitrogen temperature (77K). Analysis has been made to explain the experimental results and the calculation shows that the quantum effect can also be revealed even at room temperature, if the grain size in nc Si∶H films could be further controlled less than 2～3nm.

关 键 词：纳米硅 量子功能 共振隧道 薄膜二极管 

分 类 号：TN311.5[电子电信—物理电子学]