具有势垒增强层的MSM光电探测器特性的模拟  

Characteristics Simulation of MSM-PD with a barrier-enhancement layer

作　　者：覃化[1] 史常忻[1] 王森章[1] 

机构地区：[1]上海交通大学

出　　处：《半导体光电》1998年第1期12-15,共4页Semiconductor Optoelectronics

基　　金：国家自然科学资助

摘　　要：无势垒增强型的金属—半导体—金属光电探测器（ＭＳＭ－ＰＤ）已有过理论分析［１］，而对具有完全晶格匹配势垒增强层的ＭＳＭ－ＰＤ则缺乏理论分析。文章将具有完全晶格匹配势垒增强层的ＭＳＭＰＤ简化为一维模型，并通过理论分析，得出了它的暗电流特性。其结果与实验的相符。MSM-PD without a barrier-enhancement layer has been theoretically analyzed,while little analysis has been done on MSM-PD with a lattice-matched barrier enhancement layer.Dark current characteristics are given by virture of theoretical analysis on MSM-PD with a barrier-enhancement layer which is simulated by using a one-dimensional model.The result of the analysis is in good agreement with that of the experiments.

关 键 词：光电器件 探测器 肖特基势垒 势垒增强层 

分 类 号：TN382[电子电信—物理电子学] TN15