氮离子束轰击对电弧离子镀TiN膜层的作用  

Effect of N^+ Ion Beam Bombardment on the Properties of Arc-Ion-Plated TIN Films

作　　者：吕树国[1,2] 刘常升[1] 李玉海[2] 张罡[2] 毕监智[2] 金光[2] 

机构地区：[1]东北大学材料与冶金学院,辽宁沈阳110004 [2]沈阳理工大学中俄联合高能束流实验室,辽宁沈阳110168

出　　处：《材料保护》2009年第2期58-60,84,共3页Materials Protection

基　　金：科技部国际合作重点项目(2004DFA4800)

摘　　要：电弧离子镀膜层中"大颗粒"的存在,降低了膜层质量,限制了其进一步应用。采用俄罗斯UVN0.5D2I离子束辅助沉积电弧离子镀设备,对高速钢W18Cr4V上沉积的TiN膜层进行了氮离子束轰击。结果表明:TiN膜层表面"大颗粒"完全消失,凹坑浅而平整,粗糙度降低。膜层中较软的Ti和Ti2N向TiN转变,TiN(111)取向逐渐减弱,而(200)取向逐渐增强。膜层的显微硬度由原来的1980HV1N升高到2310HV1N。TiN films were deposi-ted on W18Cr4V high-speed steel substrates using a UVN 0.5 D21 arc ion plating device made in Russia.The effect of N ion bombardment on the phase structure,hardness,and properties of the TiN films were investigated.It was found that the large gran-ules on TiN films disappeared after N+ ion beam bombardment,accompanied by formation of smooth and shallow concavities and decrease of surface roughness.At the same time,relatively soft phases Ti and Ti2 N were converted to TiN along with N + ion beam bombardment,and the orientation of TiN in(111)direc-tion was decreased while that in(200)direction was promoted.Moreover,N' ion beam bombardment led to microhardness in-crease of the ceramic film from 1 980 HV1 N to 2 310 HV1 N.

关 键 词：氮离子束 轰击 电弧离子镀 TIN膜 显微硬度 

分 类 号：TG174.444[金属学及工艺—金属表面处理]