碲-熔剂方法生长ZnTe单晶的太赫兹辐射及探测(英文)  

THz EMISSION AND DETECTION OF ZnTe BULK CRYSTALS GROWN BY Te SOLVENT METHOD

作　　者：王仍[1] 葛进[1] 方维政[1] 张惠尔[1] 胡淑红[1] 戴宁[1] 李栋[2] 马国宏[2] 

机构地区：[1]中科院上海技术物理所红外国家重点实验室,上海200083 [2]上海大学物理学院,上海200444

出　　处：《红外与毫米波学报》2009年第1期1-3,15,共4页Journal of Infrared and Millimeter Waves

基　　金：supported by The National High Technology Research and Development(No.2006AA12Z135);National Nature Science Foundation of China(Nos.10334030 and 60225004);Knowledge Innovation Program of Chinese Academy of Sciences(Nos.C2-38 and C2-22).

摘　　要：通过Te熔剂方法生长出<110>晶向的ZnTe单晶,利用X射线衍射(XRD)及拉曼光谱对该材料进行了测试.详细研究了太赫兹时域光谱系统中该ZnTe单晶作为激发和探测晶体的辐射和探测特性.结果表明在钛-宝石激光器的泵浦下,Te熔剂方法生长的<110>晶向的ZnTe晶体表现出良好的THz辐射性能,室温下激发频谱可达3THz以上.〈 110 〉 oriented ZnTe crystals were grown by Te-solvent method and tested by X-ray diffraction （XRD） and Raman scattering measurements. THz generation and detection characteristics of the Te-solvent-grown ZnTe electro-optic crystals were studied in detail in Terahertz-time domain spectroscopy. Our results show that the 〈 110 〉 -oriented ZnTe crystals can emit high signal noise ratio THz signal pumped by Ti： sapphire laser, and the THz pulse＇ s width is over 3 THz at the room temperature.

关 键 词：ZnTe单晶 太赫兹时域光谱系统(THz—TDS) Te溶剂方法 

分 类 号：O472.3[理学—半导体物理]