背入射AlxGa1-xN64×1线列焦平面太阳光盲探测器  

Back-illuminated 64×1 Solar-blind Linear FPA of Al_xGa_(1-x) N Photodetector

作　　者：丁嘉欣[1] 成彩晶[1] 张向锋[1] 张晓兵[1] 鲁正雄[1] 司俊杰[1] 孙维国[1] 桑立雯[2] 张国义[2] 

机构地区：[1]中国空空导弹研究院,河南洛阳471009 [2]北京大学物理系,北京100871

出　　处：《激光与红外》2009年第2期187-189,共3页Laser & Infrared

摘　　要：在蓝宝石衬底上用MOCVD生长的材料制备了背入射Al0.42Ga0.58N/Al0.5Ga0.5NP-I-N型64元线列焦平面太阳光盲紫外探测器。测试了器件的光谱响应,其截止波长为285nm,在275nm峰值波长处的零偏电流响应率为20mA/W。测试了线列器件各元在5V反偏压下的暗电流,结果表明暗电流大约在10-8A数量级,暗电流分布均匀。线列器件各元的紫外光响应均匀性较好。Back-illuminated Al0.42Ga0.58N/Al0.5 Ga0.5 N P -I -N 64 × 1 solar-blind linear FPA of UV photodetector grown on sapphire by metalorganic chemical vapor deposition was fabricated. The cut-off wavelength is 285nm and the current responsivity at the peak wavelength of 275nm is 20mA/W under zero bias. The dark current of each pixel in the linear detector is at the range of 10^-8 A under -5V bias. The linear detector had an obvious photoresponse from UV light luminescence and a good uniformity.

关 键 词：ALGAN 背入射 线列焦平面 太阳光盲 探测器 

分 类 号：TN23[电子电信—物理电子学]