脉冲激光作用硅锗合金形成多种捕获界面态  

Various Trap States at the SiGe-SiO_2 Interface Formed by Pulses Laser

作　　者：韩志嵘[1,2] 黄伟其[2] 王海旭[2] 金锋[2] 刘世荣[3] 

机构地区：[1]贵阳学院物理与电子信息科学系,贵州贵阳550005 [2]贵州大学理学院光电子及其应用重点实验室,贵州贵阳550026 [3]中国科学院贵阳地球化学所电镜室,贵州贵阳550003

出　　处：《河北师范大学学报（自然科学版）》2009年第1期50-54,共5页Journal of Hebei Normal University：Natural Science

基　　金：国家自然科学基金(10547006);贵州大学研究生创新基金(省研理工2007001)

摘　　要：用脉冲激光辐照和退火氧化处理在硅锗合金衬底上形成了具有不同界面态分布的氧化低维结构.在这些结构中都有在几个纳米的氧化层中约束了大量的硅和锗的纳米团簇结构,分析这些低维结构所产生的光致荧光(PL)光谱发现,由于氧化条件的不同所生成的这些结构对应的PL光谱无论是强度,还是频率都发生了显著的变化.用量子受限-硅锗与氧化物界面态综合模型解释了样品PL发光的变化.Fabrication of low-dimensional structures in air by pulses laser on SiGe alloy samples in which the different oxide structures are formed by laser irradiation and annealing treament is reported. A series of photoluminescence （PL） emission has been observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. It is very interesting that the levels of the trap states change with laser irradiation and annealing treatment which produce the different PL band. A model for explaining the PL emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.

关 键 词：氧化结构 光致发光 硅锗薄膜 激光辐照 界面态 

分 类 号：O472.3[理学—半导体物理]