Zn缺陷对ZnO薄膜光学特性的影响  

Effect of Zinc Defects on the Optical Properties of ZnO Films

作　　者：谭天亚[1] 陈俊杰[1] 单晶[1] 江雪[1] 吴炜[1] 郭永新[1] 

机构地区：[1]辽宁大学物理学院沈阳市光电子功能器件与检测技术重点实验室,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2009年第1期6-8,共3页Journal of Liaoning University：Natural Sciences Edition

基　　金：辽宁省教育厅科研计划(2008224);辽宁省科技厅科研计划(20081030)

摘　　要：采用射频磁控溅射方法在熔石英玻璃衬底上制备了ZnO薄膜.薄膜的X射线衍射(XRD)分析表明样品具有较好的结晶性和良好的c轴取向.光致发光(PL)性能分析发现,分别在398 nm和470 nm波长出现了较强的发光峰,与ZnO薄膜通常的发光峰位置明显不同.通过分析表明,398 nm波长的发光峰是由于导带电子跃迁到Zn空位引起,470 nm波长的发光峰是由于间隙Zn电子跃迁到Zn空位上而产生.ZnO films were prepared on fused silica substrates by radio frequency magnetron sputtering method. XRD measurements showed better crystalline and highly c -axis oriented. The photoluminescence spectrum showed two emission peaks locating at wavelength of 398 nm and 470 nm which were not consistent with the typical position of emission peak, demonstrating that the emission peak at 398 nm can be attributed to the electron transitions from the conduction band to Zn vacancies levels, and the emission peak at 470 nm can be attributed to the electron transitions from intestinal Zn levels to Zn vacancies levels.

关 键 词：ZNO薄膜 光致发光 Zn缺陷 

分 类 号：O484.4[理学—固体物理]