面内场对三类硬磁畴的影响  

Influence of in-plane fields on the three kinds of hard domains

作　　者：胡云志[1,2] 孙会元[1] 

机构地区：[1]河北师范大学物理科学与信息工程学院,河北省新型薄膜材料实验室,石家庄050016 [2]科学出版社高等教育出版中心,北京100717

出　　处：《物理学报》2009年第2期1242-1245,共4页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10274018);河北师范大学博士基金(批准号:L2006B10)资助的课题~~

摘　　要：采用直流偏场整形的方法,研究了面内场对石榴石磁泡薄膜中三类硬磁畴的影响.得到面内场作用下三类硬磁畴畴壁中垂直布洛赫线(VBL)是逐步解体的,而且三类硬磁畴具有相同的临界面内场范围[Hi1p,Hi2p],其中Hi1p是硬磁畴中VBL开始丢失时的临界面内场,H2ip是VBL完全丢失时的最小临界面内场.实验结果还揭示了面内场作用下VBL链的解体与硬磁畴的硬度无关,为解释面内场作用下VBL的消失机制提供了重要线索.此外,还为准确测量VBL的临界面内场提供了一种新方案.The influence of in-plane field on three kinds of hard domains was studied experimentally by means of direct current bias fields reconstruction. The experiment verifies that VBLs in those three kinds of hard domains collapse gradually under the in-plane field. And the conclusion we obtained that these hard domains have the same range of the critical in-plane field [Hip^1 ,Hip^2 ] corrects the previous view that （Hip^1 ） ⅡD 〈（Hip^1 ） ID 〈（Hip^1 ） OHB . By revealing that the breakdown of VBLs affected by in-plane field is independent of the rigidity of the hard domains, this paper provides an important clue for interpreting the mechanism of the VBLs＇ vanishing and a new scheme for exactly measuring the critical in-plane field under which VBLs begin to disappear.

关 键 词：硬磁畴 整形 垂直布洛赫线 

分 类 号：O484.1[理学—固体物理]