电荷载流子倍增寄存器中的倍增噪声  

Multiplication Noise in Charge Carrier Multiplier

作　　者：何伟基[1] 陈钱[1] 顾国华[1] 

机构地区：[1]南京理工大学近程高速目标探测技术国防重点学科实验室,江苏南京210094

出　　处：《光学与光电技术》2009年第1期88-91,共4页Optics & Optoelectronic Technology

基　　金：国防基础科研基金(A2620060242);武器装备预先研究基金(4040508011)资助项目

摘　　要：信号电荷在电荷载流子倍增寄存器中的强场下,吸收电场能量激发碰撞电离过程。电子碰撞电离过程激发的电子-空穴对具有独立性和随机性,其激发过程产生的倍增噪声主要是散粒噪声。借助于马尔可夫链定理,得到了CCM单元的倍增因子的计算方法,建立了电子碰撞电离的数学模型。在此基础上,推导了CCM单元倍增噪声的功率谱密度,表明其与倍增因子相关。When the field in charge carrier multiplier is high enough, the energy gained excites mechanism-impact ionization. Because the generated electron-hole pairs during impact ionization are independence and randomness, the multiplication noises due to electron impact ionization in charge carrier multiplier are mainly shot noise. An electron impact ionization model in charge carrier multiplier is presented in this paper. The expression for multiplication factor in CCM element using Markov model is derived. The multiplication noise spectral density is given as well. And it is correlated with multiplication factor.

关 键 词：电荷载流子倍增寄存器 碰撞电离 倍增因子 倍增噪声功率谱密度 

分 类 号：TN15[电子电信—物理电子学]