MeV He^+离子注入氧化锌晶体光波导特性研究  

Characterization of Optical Waveguide in ZnO Crystal Formed by MeV Helium Ion Implantation

作　　者：明宪兵[1] 卢霏[1] 刘汉平[1] 王磊[2] 侯东超[2] 刘祥志[1] 张瑞锋[1] 

机构地区：[1]山东大学信息科学与工程学院,山东济南250100 [2]山东大学物理学院,山东济南250100

出　　处：《中国激光》2009年第2期453-457,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(10575067)资助课题

摘　　要：用能量为2.0 MeV剂量为2×10^(16) ion/cm^2 He^+离子室温下注入到z切的氧化锌晶体中形成光波导。退火前后用棱镜耦合法在633 nm激光波长下测量波导的暗模特性,发现在空气中经过适当退火后暗模消失,说明晶格损伤减少,进一步的退火处理有可能使晶格损伤完全恢复。用TRIM’2003程序模拟了2.0 MeV He+离子注入到氧化锌晶体的过程,得到氧化锌损伤分布与穿透深度的关系曲线,并利用反射计算法重构了离子注入波导的折射率分布,发现在波导区折射率增加,在离子射程的末端有一个折射率降低的光学位垒,结果还显示折射率分布曲线与损伤分布曲线非常相似,这充分说明核碰撞所造成的晶格损伤是形成光波导的主要原因。The waveguide has been fabricated in z-cut ZnO crystal by 2.0 MeV He^＋ ion implantation at doses of 2 × 10^16 ion/cm^2 at room temperature. The dark modes of the waveguide were measured by the prism-coupling method with the wavelength 633 nm before and after annealing in air. It is found that there is no dark mode after annealing in air, which means that the lattice damage is considerably reduced, and a completely recovery of lattice structure can be expected by further annealing treatment. TRIM ＇2003 code was used to simulate the damage profile in ZnO crystal by 2.0 MeV He^＋ ion implantation, and profile of lattice damage versus depth was obtained. The refractive index profiles of the waveguide were reconstructed using reflectivity calculation method, It is found that a positive change of refractive index happens in the guiding region, and an optical ＂barrier＂ of low refractive index is formed at the end of the ion track,and also found that the shape of the refractive-index profile are quite similar to that of the damage distribution, which provides a vivid proof that the lattice damage produced by nuclear collisions should be most responsible for fabricating of waveguide.

关 键 词：导波光学 光波导 折射率分布 离子注入 氧化锌 

分 类 号：TN252[电子电信—物理电子学]