功率MOSFET测试仪的设计  

Design of Test Apparatus of Power MOSFET

作　　者：张建芳[1] 刘连生[1] 

机构地区：[1]中国民航大学基础实验中心,天津300300

出　　处：《中国民航大学学报》2009年第1期51-54,共4页Journal of Civil Aviation University of China

基　　金：中国民用航空局科技项目(MYO517420)

摘　　要：介绍了以单片机为核心的功率MOSFET测试仪的原理、系统结构及具体的软硬件设计。将脉冲功率法引入功率MOSFET跨导和沟道电阻的测试,很好地解决了大电流偏置下参数测试的散热问题。所设计的功率MOSFET测试仪可以进行功率MOSFET的耐压、沟道电阻、开启电压、跨导及输入结电容几个参数的精确测量,并已实用化。In this paper, the principle, system stucture and the design of both hardware and software of a kind of power MOSFET the meaning of the test apparatus are introduced, which is based upon MCU. The pulse power method is applied in the forward transconductance and static drain-source on resistance testing of power MOSFET, which could solve the overheat problem of parameters testing under great bias current well. This test apparatus is able to measure the drain-source breakdown voltage, static drain-source on resistance, gate threshold voltage, forward transconductance and input capacitance of power MOSFET accurately, which has been applied in practice.

关 键 词：单片机 脉冲功率法 MOSFET 测试仪 

分 类 号：TN707[电子电信—电路与系统]