氮化碳薄膜的X射线衍射分析  

X-Ray Diffraction Analysis of the Carbon Nitride Thin Films

作　　者：吴大维[1] 何孟兵[1] 范湘军[1] 郭怀喜[1] 范炜 傅德君[1] 

机构地区：[1]武汉大学物理系,武汉430072

出　　处：《材料导报》1998年第3期43-45,27,共4页Materials Reports

基　　金：国家自然科学基金

摘　　要：研究了生长在硅片、合金钢片上的氮化碳薄膜的X射线衍射谱(XPD)。实验结果表明在硅片上先生长Si_3N_4过渡层和对样品进行热处理,有利于β-C_3N_4晶体的生成。不同晶面的硅衬底,生长C_3N_4薄膜的晶面不同。合金钢片上C_3N_4薄膜,出现七个β-C_3N_4衍射峰和六个α-C_3N_4衍射峰,这些结果与β-C_3N_4和α-C_3N_4的晶面数据计算值相符合。We present the X-ray diffraction(XRD) spectrum of carbon nitride thin films deposited on Si and alloy steel substrates. The experiment results indicate that(100) oriented S(?)s beneficial to the growth of β-C3N4 crystal thin film. With different Si substrates, the crystal faces on which the C3N4 thin film grows are different. Seven diffraction peaks have been observed for β-C3N4,six for α-C3N4 thin film on the alloy steel substrates,and these peaks tally with the calculat-ed interplanar spacing data of β-C3N4 and α-C3N4.

关 键 词：氮化碳薄膜 X射线衍射谱 晶体生长 晶体结构 

分 类 号：O484.5[理学—固体物理]