氧化锌薄膜场效应晶体管的制备及工艺研究  

Research on Preparation and Technics of ZnO Thin Film Field Effect Transistors

作　　者：王秀章[1] 晏伯武[2] 郭建林[3] 

机构地区：[1]湖北师范学院物理与电子科学学院,黄石435002 [2]黄石理工学院计算机学院,黄石435000 [3]黄石理工学院环境工程学院,黄石435000

出　　处：《材料导报》2009年第5期96-99,共4页Materials Reports

基　　金：国家自然科学基金资助项目(10874075);湖北省教育厅重点科技项目基金资助项目(D20082203);黄石市科技攻关计划项目基金资助项目(黄科技发成[2006]18号)

摘　　要：场效应晶体管是现代微电子技术的重要组成部分。为制备氧化锌薄膜晶体管,分析了氧化锌的p型、n型掺杂特性,对p型掺杂进行了实验分析和理论探讨,比较了各种制备氧化锌薄膜晶体管的工艺特点,展示了ZnO在未来电子和光电子领域的潜在应用。The field effect transistor is an important constituent part of modern micro-electronics. For the preparation of ZnO thin film transistor, in the present paper the properties of p-type doping and n-type doping of ZnO film are analyzed. The experiment result is analyzed and its theories are explored and discussed. Several kinds of preparation methods are analyzed, and the properties of the preparation methods of the ZnO films transistor are compared. The potential application of ZnO in the future electronic and opto-electronic fields is shown.

关 键 词：氧化锌 薄膜 P型掺杂 制备 

分 类 号：TN373[电子电信—物理电子学]