A Sensor-on-Chip Based on Second-Order Optical Effect of ZnO Nanowires  

作　　者：朱菁 朱光平 吕昌贵 徐春祥 崔一平 

机构地区：[1]Advanced Photonics Center, Southeast University, Nanjing 210096

出　　处：《Chinese Physics Letters》2009年第1期108-111,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60877024, 10374013, 60576008, 1067402 and 60725413, the National High-Tech Research and Development Programme of China under Grant No 2006AA03Z313, the National Basic Research Programme of China under Grant No 2007CB936300, and the Natural Science Foundation of Jiangsu Province （BK2006553）.

摘　　要：Strong second-order nonlinear effect of ZnO nanowires on a silicon wafer are demonstrated by using the hyper- Rayleigh scattering （FIRS） measurement. The large nonlinear effect can be attributed to the following two factors： （1） the large total dipole moment caused by high surface defect density and electrostatic potential gradient, （2） coherent effect due to high crystal quality of single nanowire. Moreover, the second-order nonlinear effect is found to become weaker when the chip is put into organic solvent due to modification of surface defect caused by organic molecules. The variation of second-order signal in the solvent indicated the potential applications of ZnO nanowires as a sensor-on-chip （SoC）.Strong second-order nonlinear effect of ZnO nanowires on a silicon wafer are demonstrated by using the hyper- Rayleigh scattering （FIRS） measurement. The large nonlinear effect can be attributed to the following two factors： （1） the large total dipole moment caused by high surface defect density and electrostatic potential gradient, （2） coherent effect due to high crystal quality of single nanowire. Moreover, the second-order nonlinear effect is found to become weaker when the chip is put into organic solvent due to modification of surface defect caused by organic molecules. The variation of second-order signal in the solvent indicated the potential applications of ZnO nanowires as a sensor-on-chip （SoC）.

关 键 词：field emission molybdenum dioxide enhancement factor 

分 类 号：O47[理学—半导体物理]