透射式GaAs光电阴极的X射线衍射研究  

GaAs TRANSMISSION PHOTOCATHODE BY X-RAY DIFFRACTION

作　　者：米侃[1] 朱李安[1] 赛小峰[1] 张景文[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所,西安710068

出　　处：《光子学报》1998年第1期85-88,共4页Acta Photonica Sinica

摘　　要：本文介绍了高精度多晶多反射X射线衍射仪的一种新的应用．首次将其应用于研究高灵敏度第三代微光象增强器中由掺Zn的p型GaAs／GaAlAs、玻璃组成的光电阴极的材料特性；发展了用倒格子空间衍射图方法评价光电阴级组件晶体质量的方法．通过分析得知，衍射强度在倒格子空间沿。方向展宽主要起因于晶体中的嵌镶效应的增强．文中采用衍射动力学理论的计算方法并忽略初始条件，模拟后得到的曲线与衍射强度沿ω／θ方向的投影强度曲线符合的比较好．粘接良好的阴极样品表明，GaAs／GaAlAs晶格常数的变化基本上可以消除，但粘接引起的嵌镶效应的增强却不能完全消除．This paper presents a new application of high resolution multi--crystal multi--reflectiondiffractometer (HRMCMRD). For the first time, the HRMCMRD has been used to study the highsensitivity photocathode of the third generation intensify tube, which is Composed of Zn -- doping p -- typeGaAs / GaAlAs crystal bounded to glass. The reciprocal space mapping has been developed to evaluatethe crystal quality of the photocathode. It is shown that the broading of the reciprocal space profilealong ω direction results in the increased mosaic effect. The projected diffraction intensity along ω/2θdirection is accorded with the simulated curve by dynamical diffraction theory and to neglet the initialcondition eliminated. Well--bounded photocathode sample suggests that the variation of crystal latticeparameter can almost be eliminated by optimizing the technological process,but the increased mosaiceffect can not be eliminated completely.

关 键 词：光电阴极 空间二维图 砷化镓 微光象增强型 

分 类 号：TN223.03[电子电信—物理电子学]