半导体量子阱中自由激子稳态荧光特征  

INTENSITY RELATIONSHIP BETWEEN EXCITATION AND THE STEADY STATE PHOTOLUMINESCENCE OF FREE EXCITONS IN SEMICONDUCTOR QUANTUM WELLS

作　　者：金世荣[1] 郑燕兰[1] 林春[1] 钟金权 李爱珍[1] 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室

出　　处：《物理学报》1998年第1期131-138,共8页Acta Physica Sinica

摘　　要：在不同晶格温度和不同激发光强度下，测量了四元系ＧａＩｎＡｓＳｂ／ＧａＡｌＡｓＳｂ单量子阱中自由激子的荧光光谱，导出了稳态光谱测量条件下自由激子荧光强度与激发光强度和晶格温度的一般性公式．计算结果表明，激子相对占有数引起的温度和密度效应会影响激子发光的强度关系．根据本文的简单模型，线性比例系数Ｉ／Ｉ０实际上综合地反映了量子阱中自由激子的荧光效率，而从激子荧光强度的Ａｒｈｅｎｉｕｓ图的最佳拟合中不仅可以得到激子的束缚能和激活能，而且还能估计出量子阱材料的本底浓度和散射时间常数．Abstract The photoluminescence (PL) intensity of free excitons in a GaInAsSb/GaAlAsSb quantum well (QW) laser structure is investigated as a function of excitation intensity and lattice temperature.The relationship between PL intensity of free excitons and excitation intensity as well as lattice temperature in the steady state PL measurements was developed for the quantitative descriptions of the experimental data.Calculations show that the variation of exciton relative population with excitation intensity has strong influence on the relationship between PL intensity of free excitons and excitation intensity. It is found that the linear coefficient I/I 0 is actually the characterization of the exciton photoluminescence efficiency. According to our model,the background density of the quantum well material as well as the scattering time constant of the QW,in addition to the excitonic binding energy and activation energy, is also obtained by fitting the Arrhenius plot of PL intensity

关 键 词：半导体 量子阱 自由激子荧光 PL TRPL 

分 类 号：O471.1[理学—半导体物理] O472.3[理学—物理]