金属-绝缘体-金属隧道发光结的电子隧穿和负阻现象  

ELECTRON TUNNELING AND NEGATIVE DIFFERENTIAL RESISTANCE OF MIM LIGHTEMISSION TUNNEL JUNCTION

作　　者：俞建华[1] 孙承休[1] 王茂祥[1] 张佑文[1] 魏同立[1] 

机构地区：[1]东南大学电子工程系,东南大学物理系

出　　处：《物理学报》1998年第2期300-306,共7页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：薄膜ＡｕＡｌ２Ｏ３Ａｌ隧道结（ＭＩＭＴＪ）在产生可见光发射的同时表现出了明显的负阻现象．这种负阻现象的物理机制是由于结中产生了作为发光中介作用的表面等离极化激元（ＳＰＰ）对隧穿电子的阻挡作用．通过ＭＩＭＴＪ的电子输运的电路模拟和ＩＶ特性的数值计算，揭示了ＳＰＰ在ＩＶ特性曲线中的负阻。Abstract We have observed that the apparent negative differential resistance(NDR) comes out in IV characteristic curves of metalinsulatormetal(MIM) thin film tunnel junction when lightemission from this structure occurs in the experiments.The mechanism of this NDR is that the surface plasmon polariton(SPP),which plays a role of intermediate in the process of lightemission,creates the impeding effect upon tunneling electrons.We have also built the circuit simulation of electrontransfer, computed the numerical solution of IV characteristic curve,and revealed the key action of SPP on the NDR in IV characteristic curve and the lightemission from MIM tunnel junction.

关 键 词：薄膜 MIMTJ 电子隧穿 隧道结 发光结 

分 类 号：O482.31[理学—固体物理] O484.41[理学—物理]