阵列化LAPS的结构设计及特性研究  

Structure Design and Characteristics Research of LAPS Array

作　　者：戴春祥[1] 孙颖[1] 朱大中[1] 

机构地区：[1]浙江大学信息与电子工程学系,杭州310027

出　　处：《固体电子学研究与进展》2008年第4期488-492,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60576050)

摘　　要：为了降低阵列化光寻址电位传感器(LAPS Array)非敏感区域的噪声干扰,提出一种新的结构,对非敏感区域进行重掺杂,并在其表面生长厚氧化层。用同样的激光束照射,非敏感区域的光电流比敏感区域降低20dB以上。针对阵列化LAPS的特点,研究了电极位置变化、光源强度变化对测量结果的影响。给出了阵列化LAPS在不同应用中电极位置设置的建议,同时表明用LED作为阵列化LAPS的激励光源是合理的。For reducing the noise interference of non-sensitive area, a novel structure of Light-Addressable Potentiometric Sensor Array（LAPS Array） is proposed. With heavy doped in non-sensitive area and thick dioxide on corresponding surface, the noise rejection of LAPS Array is improved. Using the same stimulated light, the photocurrent amplitude of non-sensitive area is much smaller than sensitive area （less than-20 dB）. In addition, the impact of electrode position and light intensity were researched. The results induce proposal for electrode design in applications, and indicate that using LED as stimulated light for LAPS Array is reasonable.

关 键 词：阵列化光寻址电位传感器 噪声抑制 P^+扩散 归一化 

分 类 号：TP212.3[自动化与计算机技术—检测技术与自动化装置]