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作 者:汪珍胜[1] 陈效建[1] 郑惟彬[1] 李辉[1]
机构地区:[1]单片集成电路与模块国家级重点实验室,南京210016
出 处:《固体电子学研究与进展》2008年第4期506-510,共5页Research & Progress of SSE
基 金:单片集成电路与模块国家级重点实验室基金资助支持(项目号:51491010206502)
摘 要:由于行波管"山丘状"功率增益特性需要补偿,提出了具有增益均衡功能的新型宽带单片放大器结构。利用FET作可调元件的嵌入式低损无源滤波网络实现了增益均衡功能。设计中采用了有别于传统的分布放大器形式,选择了高效率高增益级联型单级分布放大器结构。研制出的嵌入增益均衡滤波网络的三级级联型单级分布放大器,在6~14GHz频带范围内,仅使用5个0.25×120μmp HEMT,小信号增益15.5±1.3dB;输入输出反射损耗<-10dB;NF<8dB;频带中部引入的电调衰减幅度超过7dB。芯片面积为2.48mm×1.25mm。验证了此新型电路结构的可行性。A novel multi-octave-frequency-band amplifier configuration with gain equalizing characteristic has been developed to compensate the "hill-like" power-gain response of travelingwave tube in this paper. A novel embedded low-loss filter network, in which a FET is adopted as an adjustable element, makes the circuit~ s gain-band characteristic curve 'concave' and adjustable. The cascaded single-stage distributed amplifier (CSSDA) with much better performance in gain and efficiency has replaced the conventional traveling-wave distributed amplifier in designing. Based on the analysis, the designed 3-stage cascaded single-stage distributed amplifier MMIC uses only 5 pHEMTs with 0.25 × 120 um area each and has the performance : in the frequency-range of 6-14 GHz, small-signal gain of 15.3 ± 1.3 dB, input and output return loss〈 -10dB, NF〈5 dB,and the amplifier gain at middle frequency-band can be attenuated more than 7 dB. The MMIC chip size is 2.48 mm × 1.25 mm. The results of the MMIC fabrication proved the feasibility of the novel MMIC configuration in this paper.
关 键 词:微波单片集成电路 频率均衡器 可调增益 级联型分布放大器 微波功率模块
分 类 号:TN454[电子电信—微电子学与固体电子学]
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