离子敏感半导体电极的研制  

Study on Manufacture of Sensitive Ionic Semiconductor Electrode

作　　者：何景瓷[1] 

机构地区：[1]九江职业技术学院,江西九江332007

出　　处：《火工品》2008年第5期42-44,共3页Initiators & Pyrotechnics

摘　　要：为提高对离子的选择性,研制了氮化硅/硅离子敏感半导体电极,在氮化硅膜上增加了一层化学敏感及选择性较好的PVC膜。通过对离子浓度的测试,表明该电极对钾和氨等其它离子的选择性有所提高,并且响应时间缩短,敏感特性的线性范围扩大。In order to improve the selectivity of ion, the sensitive semiconductor electrode of Si3N4/Si ion was produced, a film of PVC with good chemical sensitivity and selectivity was added to the film of Si3N4 .Tests results of ionic concentration show that the electrode can choose the ions better with shorter responding time and widened linear range of sensitive feature.

关 键 词：离子 敏感膜 选择性 电极 

分 类 号：TN304.6[电子电信—物理电子学]