一种新型的不对称半桥隔离驱动电路设计  

Design of An Improved Isolated Driving Circuit of Asymmetrical Half-Bridge Converters

作　　者：陈时淦[1] 周洁敏[1] 黄子怡[1] 杨帆[1] 

机构地区：[1]南京航空航天大学,江苏南京210016

出　　处：《电源技术应用》2009年第3期22-24,共3页Power Supply Technologles and Applications

摘　　要：随着软开关技术的不断发展,不对称半桥变换器的应用越来越广泛。两路互补导通的驱动电路的设计是不对称半桥变换器设计中的一个重要环节。本文介绍了几种常用的不对称半桥MOSFET驱动电路,分析了各电路的优点和适用场合,并指出其不足之处。最后设计了一种新型的不对称半桥隔离驱动电路,通过样机实验证明这种驱动电路不仅结构简单、设计合理,而且能够较好地实现不对称半桥电路的驱动。The design of the complementary driving circuit is a very important part of the asymmetrical halfbridge converter. In this paper, several commonly used MOSFET driving circuits are introduced and their respective defects are indicated. Finally, an improved isolated driving circuit is presented. Then, this driving circuit is successfully adopted to setup a prototype with asymmetrical half bridge converter. The experimental results show that the driving circuit has good performance.

关 键 词：不对称半桥 MOSFET 隔离驱动电路 

分 类 号：TN6[电子电信—电路与系统]