MEMS开关中氮化硅薄膜工艺研究  

Study on the silicon-nitride film in MEMS switches

作　　者：许淡清[1] 于映[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《福州大学学报（自然科学版）》2009年第1期50-53,共4页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省自然科学基金资助项目(2006J0032)

摘　　要：分析了沉积薄膜厚度、PECVD的薄膜沉积温度、反应气体形成的杂质以及多层薄膜之间热应力匹配等因素对薄膜残余应力的影响.应用光刻分割聚酰亚胺(PI)牺牲层、分层生长氮化硅薄膜及快速热退火等工艺减小薄膜残余应力,成功生长出了合格的氮化硅薄膜.The factors of exerting effect upon the residual stress were analyzed. These factors basically include the thickness of deposition film, the suitable temperature during PECVD, the contanminations created by reaction gas and the match of the thermal stresses in multi - layers. The residual stresses upon siliconnitride thin film are controled by dividing the PI sacrificial layer with lithography, depositing by layer as well as rapid thermal annealing. In the end, the qualified film is successfully deposited.

关 键 词：氮化硅 薄膜 残余应力 MEMS开关 

分 类 号：TN405[电子电信—微电子学与固体电子学]