ZnO和ZAO薄膜磁控溅射等离子体发射光谱  

Plasma emission spectra of ZnO and ZAO thin film grown by RF magnetron sputtering

作　　者：韩力[1,2] 熊予莹[1] 

机构地区：[1]华南师范大学物理与电信工程学院,广东广州510006 [2]广东省粤晶高科股份有限公司,广东广州510663

出　　处：《电子元件与材料》2009年第3期42-44,共3页Electronic Components And Materials

摘　　要：采用在线测试等离子体发射光谱的方法,研究了ZnO薄膜和ZAO薄膜磁控溅射生长等离子体的状态,分析了ZAO薄膜生长过程中的工作压强、溅射功率和衬底温度这几个重要参数对等离子体状态影响的规律。结果表明:主要是等离子体中粒子的密度随实验参数发生规律性变化,其变化规律与实验参数对薄膜生长质量影响的规律基本一致,可以定性地解释影响薄膜结晶质量的直接原因。最佳参数为:压强0.2Pa,功率80W和温度450℃。Using on-line measurement, the plasma emission spectra during magnetron sputtering for ZnO and ZAO thin films were gotten. The state of plasma in the working room was studied by analyzing the emission spectra of plasma. The influences of the deposition parameters （working pressure, sputtering power and subtrate temperature） for ZAO thin films grown by magnetron sputtering on the plasma in working room were investigated. The results show that the particle density of plasma in working room con be influenced evidently by changing the deposition parameters. And almost all the results accord with the former investigations. The direct reason, affecting crystal quality of thin film, is explained qualitatively. The optimum parameters are 0.2 Pa, 80 W and 450 ℃.

关 键 词：无机非金属材料 ZAO薄膜 等离子体 发射光谱 

分 类 号：TN304[电子电信—物理电子学]