不同形貌衬底上铝诱导poly-Si薄膜的制备及表征  

Preparation and Characterization of Poly-Si Films on Different Topography Substrates by AIC

作　　者：王成龙[1] 范多旺[1] 刘红忠[2] 张福甲[3] 邢达[4] 刘颂豪[4] 

机构地区：[1]兰州交通大学国家绿色镀膜技术与装备工程技术研究中心,甘肃兰州730070 [2]西安交通大学先进制造技术研究所,陕西西安710049 [3]兰州大学物理科学与技术学院,甘肃兰州730000 [4]华南师范大学信息光电子科技学院,广东广州510631

出　　处：《光谱学与光谱分析》2009年第3期752-755,共4页Spectroscopy and Spectral Analysis

基　　金：教育部长江学者与创新团队计划项目(IR0629);国家科技支撑计划项目(2006BAE04B05-3);国家自然科学基金项目(50505037,60676033);兰州交通大学“青蓝”人才工程计划项目(QL2006A16)资助

摘　　要：以表面平整、粗糙的玻璃为衬底,在不同衬底温度下直流磁控溅射沉积a-Si薄膜,制备成glass/a-Si/Al样品,经退火处理制备了poly-Si薄膜。分别采用Raman光谱、XRD光谱等手段研究了衬底粗糙度以及衬底温度对铝诱导晶化(AIC)制备的poly-Si品质的影响。Raman光谱表明:所有样品在521 cm-1都有尖锐、对称的Raman峰出现,表明样品完全结晶;XRD结果表明:poly-Si在(111)晶向择优生长;XRD在(111)处的半高宽值(FWHM)表明:玻璃衬底的形貌和a-Si沉积的温度对poly-Si的品质产生影响。200℃可能是AIC制备poly-Si薄膜时沉积a-Si时的最适温度。Polycrystalline silicon （poly-Si） thin-films were made on planar and textured glass substrates by aluminum-induced crystallization （AIC） of in situ amorphous silicon （a-Si） deposited by DC-magnetron. The poly-Si films were characterized by Raman spectroscopy, X-ray diffraction （XRD） and atomic force microscopy （AFM）. A narrow and symmetrical Ranman peak at the wave number of about 521 cm^-1 was observed for all samples, indicating that the films were fully crystallized. XRD results show that the crystallites in the authors＇ AIC poly-Si films were preferably （111） oriented. The measurement of full width at half maximum （FWHW） of （1 11） XRD peaks showed that the quality of the films was affected by the a-Si deposition temperature and the surface morphology of the glass substrates. It is likely that an a-Si deposition temperature of 200℃ seems to be ideal for the preparation of poly-Si films by AIC.

关 键 词：a-Si薄膜 粗糙度 衬底温度 晶化 AIC 

分 类 号：TN304.0[电子电信—物理电子学]