In掺杂ZnO透明导电薄膜光电性质的研究  

Study of Electrical and Optical Properties of Transparent Conductive In-doped ZnO Thin Films

作　　者：方亮[1,2] 彭丽萍[1] 杨小飞[1] 李艳炯[1,3] 孔春阳[4] 

机构地区：[1]重庆大学应用物理系,重庆400030 [2]重庆大学光电技术及系统教育部重点试验室,重庆400030 [3]重庆光电技术研究所,重庆400060 [4]重庆师范大学应用物理系,重庆400047

出　　处：《半导体光电》2009年第1期63-66,共4页Semiconductor Optoelectronics

基　　金：教育部新世纪优秀人才支持计划项目(NCET-05-0764);重庆大学研究生创新基金项目(200801A1,B0060265)

摘　　要：采用射频磁控溅射技术成功制备出无掺杂和In掺杂的ZnO透明导电薄膜。研究了In掺杂对薄膜的结构和光电性能的影响。结果表明,In掺杂有利于提高ZnO薄膜结晶度,使薄膜表面更加致密平整;由于In3+替代了Zn2+,提供了大量的剩余电子,使薄膜的导电性质得到了很大的提高,所得薄膜的最小电阻率为4.3×10-3Ω.cm。制备的ZnO薄膜在可见光范围的透过率达到了85%,In的掺杂对透光率的影响不大。Transparent conductive thin films of un-doped and In-doped ZnO thin films have been prepared by RF magnetron sputtering. The influence of In doping on the structure, electrical and optical properties of the films were studied. It shows that the crystal quality of the films get better, the surface get dense and smooth and the transmittance of the films change slightly as doping In into the films. The substitution of Zn2＋ by In3＋ in the films gives lots of electron, which act as free carriers, and enhance the conductivity of the films. The lowest resistivity of the films obtained is 4.3×10^-3 Ω·cm, and all the films has a high transmittance of 85Y00 in the visible range.

关 键 词：In掺杂ZnO薄膜 透明导电 光电性质 磁控溅射 

分 类 号：O484.4[理学—固体物理]