溶胶凝胶法制备多孔SiO_2薄膜的新方法  

Novel Method of Fabricating Porous Silica Film with Two Step Catalyze Sol-Gel Process

作　　者：郑巍峰[1] 李金华[1] 赵蒙[1] 付学成[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213016

出　　处：《半导体技术》2009年第3期225-227,共3页Semiconductor Technology

基　　金：国家自然科学基金(10675055);常州市科技计划资金资助项目(CE:2005027)

摘　　要：以氨水、醋酸为催化剂,用正硅酸已酯(TEOS)为Si源,甘油作为防裂剂,聚乙烯醇(PVA1750)作为致缓剂和发泡剂,制作多孔SiO2薄膜。碱催化使得硅-羟基化合物的溶解度增大,并抑制了SiO2的聚合,弱酸的二步催化使硅-羟基化合物聚合成10～100nm的胶粒。丙三醇和TEOS水解的中间体Si(OC2H5)4-x(OH)x硅羟基形成氢键,抑制了硅-羟基化合物的聚沉,PVA的存在减缓了溶胶的聚合,在快速退火炉热处理时产生多孔结构。多孔SiO的厚度在3μm内可调。Taking ammonia, acetic acid as catalyzer, TEOS as Si sources, glycerin as anti-cracking agent, PVA1750 as ingredients and foaming agent, porous silica film was fabricated. Alkli catalyzer makes the silicon-hydroxyl compound solubility increase, and restrain silica agregation, acid catalyzer makes the silicon-hydroxyl agregate to grain of 10-100 nm. Gylcerol and TEOS intermediate Si （0C2H5）4-x （OH）x compose hydrogen bond, and restrain silicon-hydroxyl compound sedimentation. PVA decrease sol＇s agregation makes porous structure in the thermal process. The porous silica film thickness is about 3 um.

关 键 词：多孔SiO2薄膜 溶胶凝胶法 正硅酸乙酯 快速退火 热处理 

分 类 号：TN304[电子电信—物理电子学]