特种快速大功率半导体切断开关的研制  

Study of Special Type Fast High Power Semiconductor Opening Switches

作　　者：杨勇[1] 刘英坤[1] 崔占东[1] 刘忠山[1] 马红梅[1] 陈洪斌[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中国工程物理研究院应用电子学研究所,四川绵阳621900

出　　处：《半导体技术》2009年第3期244-246,290,共4页Semiconductor Technology

基　　金：国家部委基金资助项目

摘　　要：介绍了大功率半导体切断开关(SOS)的工作原理和研制结果。面积为0.28cm2的开关(59只串联)在300Hz连续工作模式中,切断电流为1.9kA,电流切断时间为9.56ns;在1000Hz猝发工作模式中,切断电流为1.73kA,电流切断时间为10.86ns;在负载为470Ω的耐压试验中,开关输出的高压窄脉冲的幅值为270kV,宽度约为10ns。The operation principle and the development results of high power semiconductor opening switches （SOS） were introduced. The device （59 cells in series） with the surface area of 0.28 cm^2 operates at 300 Hz continuous mode and its cut off current is 1.9 kA corresponding to the eurrent interruption time of 9.56 ns. And at 1 000 Hz burst mode, its cut off current is 1.73 kA corresponding to the current interruption time of 10.86 ns. The device operates at the experiment of withstanding voltage at the load of 470Ω, and a 270 kV narrow high voltage pulse is formed with a duration of 10 ns.

关 键 词：半导体切断开关 连续工作模式 猝发工作模式 高压窄脉冲 

分 类 号：TM56[电气工程—电器]