电解液对准分子电化学刻蚀硅的影响研究  

The Study of the Solution Effect on Laser-induced Electrochemical Etching of Silicon

作　　者：龙芋宏[1] 史铁林[2,3] 熊良才[2,3] 柳海鹏[2] 

机构地区：[1]桂林电子科技大学机电工程学院,广西桂林541004 [2]华中科技大学机械科学与工程学院,湖北武汉430074 [3]武汉光电国家实验室(筹),湖北武汉430074

出　　处：《应用激光》2009年第1期43-45,49,共4页Applied Laser

基　　金：国家重点基础研究发展计划资助项目(项目编号:2003CB716207);国家自然科学基金项目(项目编号:50575078;50405033)

摘　　要：激光电化学刻蚀是将激光加工技术和电化学加工技术有机结合起来而形成的一种复合型刻蚀工艺。为了研究电解液对激光电化学刻蚀硅的影响,本文采用248nm KrF准分子激光作为光源聚焦照射浸在KOH溶液中的阳极半导体n-Si上,实现激光诱导电化学刻蚀。在实验的基础上,研究了化学溶液对激光电化学刻蚀Si的刻蚀表面形貌和刻蚀速率的影响,并对其产生的原因进行了分析。试验结果表明:化学溶液对刻蚀工艺的影响主要来源于不同浓度的溶液对激光的吸收和折射;采用吸收率较小、浓度较低的溶液和控制液膜厚度能有效减小溶液飞溅和溶液折射。本文中,溶液的厚度控制在1mm左右。Laser electrochemical etching process, which combines laser direct etching process and electrochemical etching process, is a compound etching technique. In order to further understand the electrolyte effect on laser-induced electrochemical etching silicon, this paper adopts 248nm excimer laser as light source and uses KOH solution as electrolyte. The experiments of micromachining silicon by laser-induced electrochemical etching are carried out. Based on the experiment results, the solution effect on the etching appearances and etching rates in laser electrochemical etching silicon is researched. The reasons of etching phenomena are analyzed in detail. The experiment results indicate that the solution effect on the etching process mainly roots in the absorption and refraction of the different concentration solution to laser. Little absorption solution, low concentration solu- tion and control liquid thickness are good for reduction the splash and refraction of solution. In this paper, liquid thickness is suitably controlled about 1mm.

关 键 词：准分子激光 电化学 刻蚀 溶液 

分 类 号：TG665[金属学及工艺—金属切削加工及机床]