亚微米尺度高速电光调制器的研究进展  

Recent Progress of Sub-micrometer High-speed Electro-optic Modulators

作　　者：周亮[1] 余金中[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《激光与红外》2009年第3期239-243,共5页Laser & Infrared

基　　金：科技部"973"项目(No.2006CB302803和G2000-03066);"863"项目(No.2202AA312060);国家自然科学基金项目(No.NSFC-60537010;60576001;69896260;60336010)资助

摘　　要：基于SOI(silicon on insulator)材料的亚微米尺度电光调制器成为了研究Si光电子学的重点。评述了亚微米尺度下SOI脊型光波导实现单模条件、偏振无关、低耦合损耗的技术要求,分析并比较了几种基于不同光学结构和电学结构的电光调制器的原理和特性,讨论了达到高速电光调制的方式。Silicon-on-insulator（SOI）-based sub-micrometer electro-optic modulators become the key point of Si-based optoelectronic researching. In this paper, the techniques requirement to achieve single-mode condition, polarization dependence,low coupling loss in SOl-based sub-micrometer rib waveguide are reviewed. The principle and characteristic of several optoelectronic modulators based on different optic or electric structures is analyzed and compared, respectively. Then, the possible ways to achieve high speed optoelectronic modulation are discussed.

关 键 词：SOI 单模条件 偏振无关 高速电光调制器 

分 类 号：TN761[电子电信—电路与系统]