中频脉冲磁控溅射沉积氮化铝薄膜及性能研究  

Study of deposition and properties of aluminum nitride thin films by mediate frequency pulsed magnetron sputtering

作　　者：牟宗信[1] 刘升光[1] 王振伟[1] 公发权[1] 贾莉[1] 牟晓东[1] 

机构地区：[1]大连理工大学三束材料改性实验室物理与光电工程学院,辽宁大连116024

出　　处：《材料研究与应用》2009年第1期9-13,共5页Materials Research and Application

基　　金：国家自然科学基金青年基金项目(50407015)

摘　　要：氮化铝薄膜在力学、光学、声学等领域有着广泛的应用前景.研究沉积条件对氮化铝薄膜的结构、性能的影响具有重要意义.采用纯铝溅射靶、在不同的N2流量比率条件下,采用中频脉冲磁控溅射在Si(001)衬底上制备出氮化铝薄膜.利用X射线衍射(XRD)、原子力显微镜(AFM)、椭偏仪研究了N2流量比率对氮化铝薄膜的微观结构、表面形貌、厚度和折射率的影响.研究结果表明,氮化铝薄膜的微观结构、表面形貌、厚度和折射率与N2流量比率有明显的关系,当固定其它沉积条件时,改变N2流量比率会改变薄膜的沉积速率,当沉积速率发生突变时,薄膜的折射率、微观结构、表面形貌也发生相应的变化.在实验结果的基础上结合反应沉积的表面动力学因素分析了反应气体中N2流量比率对氮化铝薄膜的表面形貌、微观结构、厚度和折射率的影响原因.Aluminum nitride（AlN） thin films have extensively application in mechanical, optical and acoustical fields. It is of great importance to study correlation of properties of aluminum nitride thin films with deposition conditions. Aluminum nitride thin films have been deposited onto a silicon （001） substrate by a mediate frequency pulsed magnetron sputtering of a pure Al target using different gas （Ar, N2） mixtures at fixed other conditions. The properties of morphology, microstructure, thickness and index of refractory of aluminum nitride thin films were investigated by X-ray diffractometry（XRD）, atomic force microscopic （AFM）, ellipse-polarize spectrophotometer. The surface morphology, index of refractory and deposition rate was found to depend distinctively upon the different nitrogen matter flow ratio conditions. The nitro- gen matter flow ratio changes deposition ratio of aluminum nitride thin films at fixed other conditions. Mo- reover, the morphology, microstructure and index of refractory of films show transition with this opera- tion. The effect of the nitrogen matter flow ratio on the properties of films was analyzed form experimental results and surface dynamics.

关 键 词：氮化铝 形貌 折射率 磁控溅射 

分 类 号：TB43[一般工业技术]