B-C-N薄膜的制备及其红外光谱表征  

Bonding characteristics of B-C-N thin films investigated by ourier-transformed infrared spectroscopy

作　　者：贾福超[1,2] 白亦真[1,2] 庄春强[3,2] 屈芳[1,2] 邢娇杨[1,2] 赵纪军[4] 姜辛[3] 

机构地区：[1]大连理工大学物理与光电工程学院,辽宁大连116023 [2]大连理工大学三束材料改性实验室,辽宁大连116023 [3]大连理工大学材料科学与工程学院,辽宁大连116023 [4]大连理工大学高科技研究院,辽宁大连116023

出　　处：《材料研究与应用》2009年第1期19-22,共4页Materials Research and Application

基　　金：高等学校科技创新工程重大项目培育资金(707015);科技部973计划前期研究专项课题(2008CB617614)

摘　　要：采用射频磁控溅射方法．以石墨和六方氮化硼（h-BN）为复合靶，在氩气和氮气的氛围中。在室温和673K的条件下，分别改变N2流量，沉积BCN薄膜．经傅立叶变换红外光谱（FTIR）分析表明，在1000-1800cm-1和2200cm-1处分别出现了C=N键和弱的C≡N键的特征吸收峰．表明沉积的薄膜组分当中，少量碳原子与氮原子结合．而分别溅射石墨和h-BN靶，红外光谱分析显示1100cm-1处不是B--C键．说明采用射频磁控溅射方法得到的薄膜倾向于相分离．Optimizing RF power, work pressure, substrate temperature, the N2 flux, and other parameters, boron carbon nitride films were deposited by radio frequency magnetron sputtering from hexagonal graph- ite and boron nitride（h-BN）targets in the atmosphere of argon（Ar） and nitrogen（N2）. FTIR of BCN films shows that two absorption bands at approximately 1200-1800 cm-1 and 2200 cm-1 with weak absorption are displayed, which can be interpreted as C=N and C≡N bonding respectively. When graphite h-BN tar- gets were sputtered respectively,FTIR reveals 1100cm-1 isn＇t B--C bond. The films deposited by radio frequency magnetron sputtering were inclined to phase separation.

关 键 词：BCN薄膜 傅立叶变换红外光谱 射频磁控溅射 

分 类 号：O484.4[理学—固体物理]