等离子体刻蚀提纯冶金硅研究  

Study of metallurgical grade silicon purification by plasma etching

作　　者：尹盛[1] 曹伯承[1] 赵亮[1] 王敬义[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《功能材料》2009年第3期400-402,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10475029)

摘　　要：通过自行设计的冷等离子体粉粒纯化系统,将硅粉撒进辉光放电区,以Ar气为反应气体,利用鞘层区域辉光放电的冷等离子体对硅粉料的作用,进行一系列的处理后,硅粉表面形貌平整度明显提高,纯度从98.75%提高到99.56%。在此基础上,设计射频感应放电等离子体的振动倾斜反应室,经实验,将硅粉纯度提高到99.96%,接近太阳级硅的要求,也为该研究未来的发展提供了新的思路和理论参考。Under the Ar atmosphere, Si-particulate was spread into the glow discharging area through the system of cold plasma Si-particulate purification. After a series of treatments, the surface roughness was increased obviously, and the purity increase from 98.75% to 99.56%. Based on it, a vibrational synclinal chamber of RF Induction discharge plasma was design, and the purity can be increased to 99.96%, which is approached to the requirement of solar-grade silicon. It also provide a new thought for the future development of the research.

关 键 词：冷等离子体 冶金级硅 刻蚀 射频 

分 类 号：TN304.051[电子电信—物理电子学]