微弱神经信号探测CMOS放大器  

CMOS Amplifier for Weak Neural Signal Detection

作　　者：郑春[1] 李文渊[1] 

机构地区：[1]东南大学集成电路学院,南京210096

出　　处：《电子器件》2009年第1期53-55,59,共4页Chinese Journal of Electron Devices

基　　金：自然科学基金项目资助"微电子芯片嵌入式神经信道桥接与信号再生研究资助"(90707005)

摘　　要：采用CSMC 0.5μm CMOS工艺设计了微弱神经信号探测放大器芯片。电路适用于卡肤电极。电路采用并联运算放大器差动输入的三运放结构,具有输入阻抗高、共模抑制比高的特点。为防止运算放大器产生振荡,采用了带调零电阻的密勒补偿技术对运放进行频率补偿。电路工作电压±2.5 V,单个运放的功耗为734μW,增益86.2 dB。电路功耗1.9 mW,增益80 dB,3 dB带宽大于10 kHz,可满足神经信号探测的应用要求。An amplifier for weak neural signal in CSMC 0.5 μm CMOS process is presented.The circuit applying to cuff electrode,uses three operation amplifier instrumentation amplifiers with high input impedance and high CMRR.For preventing operational amplifier oscillation,the Miller compensation technology with adjusting zero resistance is adopted.The operational amplifier can operate under ±2.5 V with a power consumption of 734 μW,achieving the mid-band gain is 86.2 dB.The whole circuit of the power consumption is 1.9 mW,the mid-band gain is 80 dB and a 3 dB-bandwidth is more than 10 kHz.The amplifier can basically meet the needs of the neural signal detection application requirements.

关 键 词：神经信号探测 运算放大器 CMOS工艺 卡肤电极 

分 类 号：TN432[电子电信—微电子学与固体电子学]