多场耦合理论与智能材料的研究进展  

ADVANCES IN MULTI-FIELDS COUPLED THEORY AND INTELLIGENT MATERIAL

作　　者：周益春[1] 方岱宁[2] 郑学军[1] 王金斌[1] 

机构地区：[1]湘潭大学低维材料及其应用技术教育部重点实验室,湘潭411105 [2]清华大学工程力学系,北京100084

出　　处：《中国科学基金》2009年第2期78-81,共4页Bulletin of National Natural Science Foundation of China

摘　　要：本文报道了2008年"多场耦合理论与智能材料"高级讲习班暨全国研究生暑期学校。该讲习班对智能材料的多场耦合理论研究领域的现状与发展趋势进行了研讨,主要结论归纳为三个方面:智能材料及其电子装置的发展为多场耦合力学提出的挑战与机遇;用于新型存储器等相关器件的智能材料及其相关物理力学问题;器件微型化、集成化拓展了微电子、材料、力学交叉学科的发展空间。The 2008 summer school of graduate students in China, which is named as ＂multi-fields coupled theory and intelligent material＂, is reported in this paper. The status and trends of research fields in multifields coupled theory for intelligent material are discussed, and the main conclusions are as follows. The development of intelligent material and electronical devices provide the challenge and chance to the multi-fields coupled mechanics. Intelligent material such as ferroelectric thin films are used and there are some related physical and mechanical problems. The intersected subject of microelectronics, material science, and mechanics are developed by the minuteness and integration of components and devices.

关 键 词：多场耦合 智能材料 铁电存储器 铁电薄膜 集成 

分 类 号：TB381[一般工业技术—材料科学与工程]