硅基PZT压电功能结构  

PZT piezoelectric function structure on silicon substrate

作　　者：王蔚[1] 田丽[1] 刘晓为[1] 任明远[2] 张颖[1] 

机构地区：[1]哈尔滨工业大学微电子科学与技术系,黑龙江哈尔滨150001 [2]哈尔滨理工大学软件学院,黑龙江哈尔滨150080

出　　处：《光学精密工程》2009年第3期583-588,共6页Optics and Precision Engineering

基　　金：哈尔滨工业大学跨学科交叉性研究基金资助项目(No.HIT.MD2001.01)

摘　　要：为获得适合单片集成的硅基PZT压电功能结构,对近年PZT薄(厚)膜在MEMS领域的研究现状进行了综述分析,提出了一种新型的双杯PZT/Si膜片式功能结构。采用有限元方法对双杯PZT/Si膜片进行了结构优化,得到PZT和上下硅杯的结构优化值为DPZT∶D1∶D2=0.75∶1.1∶1,一阶模态谐振频率为13.2kHz。以氧化、双面光刻、各向异性刻蚀以及精密丝网印刷等工艺技术制作了双杯硅基PZT压电厚膜膜片,膜片具有压电驱动功能,PZT压电膜厚达80μm。实验表明,双杯PZT/Si膜片式功能结构的MEMS技术兼容性好,对芯片内其它元件或电路的影响小,适合作为MEMS片内执行元件的驱动机构。In order to obtain a PZT piezoelectric function structure on the silicon substrate suitable for monolithic integrated chip, the research status quo of PZT piezoelectric thin （thick） films in the field of MEMS is analyzed, and then a new type of bi-cup PZT/Si film function structure is presented. This structure is optimized and designed with ANSYS finite element analysis software. The optimized structure parameters of the PZT and up-/sub-silicon-cup are DPZT ; D1 ： D2 =0. 75 ： 1. 1 ： 1;and the resonant frequency of the first order modality is 13.2 kHz. The bi-cup PZT piezoelectric thick film on the silicon substrate is fabricated with the oxidation, lithography, anisotropism etching and screenprinting processing, whose thickness is 80 μm, and has piezoelectric driving function. This PZT piezoelectric thick film driving structure with bi-cup on the silicone substrate has a better compatibility with MEMS technique, and is suitable to be a driving component for MEMS micro-actuator.

关 键 词：PZT 压电功能结构 执行器元件 微机电系统 

分 类 号：TN384[电子电信—物理电子学]