New physical effects on the decay B_s→γγ in the technicolor model  

New physical effects on the decay B_s→γγ in the technicolor model

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作  者:秦秀梅 霍武军 杨晓芳 

机构地区:[1]Department of Physics Department, Southeast University

出  处:《Chinese Physics C》2009年第4期252-255,共4页中国物理C(英文版)

摘  要:In this paper we calculate the contributions to the branching ratio of Bs →γγ from charged pseudo-Goldstone bosons appearing in the one generation Technicolor model. We find that the theoretical value of the branching ratio, BR(Bs →γγ), including the contributions of PGBs, P^± and P8^±, is very different from the standard model (SM) prediction. The new physical effects can provide a one to two order of magnitude enhancement of the SM results. It is shown that the decay Bs →γγ can test new physical signals from the technicolor model.In this paper we calculate the contributions to the branching ratio of Bs →γγ from charged pseudo-Goldstone bosons appearing in the one generation Technicolor model. We find that the theoretical value of the branching ratio, BR(Bs →γγ), including the contributions of PGBs, P^± and P8^±, is very different from the standard model (SM) prediction. The new physical effects can provide a one to two order of magnitude enhancement of the SM results. It is shown that the decay Bs →γγ can test new physical signals from the technicolor model.

关 键 词:TCM charged PGBs BS 

分 类 号:O571.3[理学—粒子物理与原子核物理]

 

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