A novel micro-accelerometer with adjustable sensitivity based on resonant tunnelling diodes  

作　　者：熊继军 毛海央 张文栋 王楷群 

机构地区：[1]Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,North University of China [2]Institute of Microelectronics,Peking University

出　　处：《Chinese Physics B》2009年第3期1242-1247,共6页中国物理B（英文版）

基　　金：supported in part by the National Natural Science Foundation of China (Grant No 50775209);the Fork Ying Tung Education Foundation (Grant No 101052);Program for Excellent Talents by Ministry of Education of China

摘　　要：Resonant tunnelling diodes （RTDs） have negative differential resistance effect, and the current-voltage characteristics change as a function of external stress, which is regarded as mesc-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based miero-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.Resonant tunnelling diodes （RTDs） have negative differential resistance effect, and the current-voltage characteristics change as a function of external stress, which is regarded as mesc-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based miero-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.

关 键 词：MICRO-ACCELEROMETER piezoresistance effect resonant tunnelling diode （RTD） sensitivity 

分 类 号：TN312.2[电子电信—物理电子学] TH824.4[机械工程—仪器科学与技术]