多量子阱自电光效应器件及其负阻特性  

MULTIPLE QUANTUM WELL SELF ELECTRO OPTIC EFFECT DEVICES AND THE FEATURE OF NEGATIVE DIFFERENTIAL PHOTOCONDUCTANCE

作　　者：陈弘达[1] 张以谟[1] 郭维廉 吴荣汉[2] 高文智[2] 陈志标[2] 杜云[2] 

机构地区：[1]天津大学精密仪器与光电子工程学院 [2]中国科学院半导体研究所

出　　处：《天津大学学报》1998年第2期211-214,共4页Journal of Tianjin University(Science and Technology)

摘　　要：研究了ＧａＡｓ／ＡｌＧａＡｓ多量子阱结构的电场光调制特性，测量了光反射谱、光电流谱和光电流电压特性．结果表明，在Ｉ－Ｖ特性中存在光电流负微分电阻区．由这种多量子阱材料制备的自电光效应器件（ＳＥＥＤ）观察到明显的量子限制Ｓｔａｒｋ效应．We have investigated the electric field optical modulation of GaAs/AlGaAs multiple quantum well(MQW).Reflectivity,photocurrent spectroscopy and photocurrent voltage characteristics have been measured.The I V curve shows the feature of negative differential photoconductance.We have successfully fabricated the self electro optic effect devices(SEEDs)based on the MQW p i n structure and observe the obvious quantum confined Stark effect(QCSE)caused by room exciton absorption.

关 键 词：室温激子 多量子阱 SEED器件 电光效应器件 

分 类 号：TN36[电子电信—物理电子学]