一种新型半导体超辐射集成光源  

A Novel Semiconductor Integrated Superluminescent Source

作　　者：赵永生[1] 杜国同[1] 姜秀英[1] 韩伟华 李雪梅 宋俊峰[1] 高鼎三[1] 

机构地区：[1]吉林大学电子工程系集成光电子学国家重点联合实验室

出　　处：《高技术通讯》1998年第1期5-7,共3页Chinese High Technology Letters

基　　金：国家自然科学基金

摘　　要：为有效地提高超辐射输出功率，满足超辐射发光管应用领域不断扩大的需要，提出了超辐射发光管与半导体光放大器单片集成的思想，并采用ＡｌＧａＡｓ单量子阱、增益导引的氧化物条形结构，对该集成器件进行了初步研制。实验结果表明，这种集成器件可有效地提高超辐射输出功率，有望成为新一代大功率超辐射光源。In order to increase the superluminescent power effectively, and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated using an AlGaAs SQW heterostructure wafer and gain guid oxide stripe structures. The experimental results show that the integrated superluminescent device can increase the power notably. The device will become a new type superluminescent source.

关 键 词：超辐射发光管 集成光源 半导体光电器件 

分 类 号：TN364[电子电信—物理电子学]