检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:Nianmei Hen Guanghua Guo Lamei Zhang Guangfu Zhang Wenbin Song
机构地区:[1]School of Physics Science and Technology, Central South University, Changsha 410083, China [2]State Key Laboratory for Powder Metallurgy, Central South University, Changsha 410083, China
出 处:《Journal of Materials Science & Technology》2009年第2期151-154,共4页材料科学技术(英文版)
基 金:supported by the National Natural Sci-ence Foundation of China under Grant No. 60571043; the Natural Science Foundation of Hunan Provinceof China under Grant No. 04JJ3078.
摘 要:The magnetization reversal mechanisms for Ni nanowires with different diameters were investigated by micromagnetic simulations. The results show that the reversal mechanisms are significantly dependeht on the diameter of wire. For very thin wires, the reversal occurs by pseudo-coherent rotation. With increasing diameter, magnetization reversal takes place via different nucleation (the transverse domain wall and the vortex domain wall) and subsequent propagation. The reason of transition from the transverse domain wall to the vortex domain wall is given by analytical studies. With further increase of the diameter, the reversal nuclear domain wall becomes tundishoshaped form. As the diameter increases, the width of wall becomes larger.The magnetization reversal mechanisms for Ni nanowires with different diameters were investigated by micromagnetic simulations. The results show that the reversal mechanisms are significantly dependeht on the diameter of wire. For very thin wires, the reversal occurs by pseudo-coherent rotation. With increasing diameter, magnetization reversal takes place via different nucleation (the transverse domain wall and the vortex domain wall) and subsequent propagation. The reason of transition from the transverse domain wall to the vortex domain wall is given by analytical studies. With further increase of the diameter, the reversal nuclear domain wall becomes tundishoshaped form. As the diameter increases, the width of wall becomes larger.
关 键 词:NANOWIRE MICROMAGNETICS Magnetization reversal mechanism
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.117